1N60G

TYPE

DESCRIPTION

Manufacturer :

UMW

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

1A (Tj)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

150 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11Ohm @ 500mA, 10V

Supplier Device Package :

SOT-223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA