SQ2361AEES-T1_GE3

Manufacturer:
Vishay / Siliconix
Part Number:
SQ2361AEES-T1_GE3
Category:
Single FETs, MOSFETs
Description:
MOSFET P-CH 60V 2.8A SSOT23
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
175

Specifications

TYPE
DESCRIPTION
Manufacturer :
Vishay / Siliconix
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
2.8A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
620 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TA)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) :
2W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
170mOhm @ 2.4A, 10V
Supplier Device Package :
-
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA

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