IQE022N06LM5ATMA1

TYPE

DESCRIPTION

Manufacturer :

Infineon Technologies

Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

24A (Ta), 151A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

53 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4420 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

2.5W (Ta), 100W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 20A, 10V

Supplier Device Package :

PG-TSON-8-5

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 48µA